Technical Specifications of SSM3J35MFV,L3F
| Datasheet |  SSM3J35MFV,L3F datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Cut Tape (CT) |
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| FET Type | MOSFET P-Channel, Metal Oxide |
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| FET Feature | Logic Level Gate, 1.2V Drive |
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| Drain to Source Voltage (Vdss) | 20V |
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| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
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| Rds On (Max) @ Id, Vgs | 8 Ohm @ 50mA, 4V |
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| Vgs(th) (Max) @ Id | - |
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| Gate Charge (Qg) @ Vgs | - |
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| Input Capacitance (Ciss) @ Vds | 12.2pF @ 3V |
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| Power - Max | 150mW |
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| Operating Temperature | 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | SOT-723 |
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| Supplier Device Package | VESM |
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