Technical Specifications of 2DB1132P-13
| Datasheet |  2DB1132P-13 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Diodes Incorporated |
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| Series | - |
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| Packaging | Cut Tape (CT) |
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| Transistor Type | PNP |
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| Current - Collector (Ic) (Max) | 1A |
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| Voltage - Collector Emitter Breakdown (Max) | 32V |
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| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
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| Current - Collector Cutoff (Max) | 500nA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 100mA, 3V |
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| Power - Max | 1W |
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| Frequency - Transition | 190MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | TO-243AA |
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| Supplier Device Package | SOT-89-3 |
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