Technical Specifications of BFR843EL3E6327XTSA1
| Datasheet |  BFR843EL3E6327XTSA1 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - RF |
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| Manufacturer | Infineon Technologies |
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| Series | * |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | NPN |
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| Voltage - Collector Emitter Breakdown (Max) | 2.6V |
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| Frequency - Transition | - |
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| Noise Figure (dB Typ @ f) | * |
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| Gain | 25.5dB |
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| Power - Max | 125mW |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | * |
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| Current - Collector (Ic) (Max) | 55mA |
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| Mounting Type | Surface Mount |
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| Package / Case | 3-XFDFN |
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| Supplier Device Package | TSLP-3-10 |
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