Technical Specifications of BFS481H6327XTSA1
| Datasheet |  BFS481H6327XTSA1 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - RF |
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| Manufacturer | Infineon Technologies |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | 2 NPN (Dual) |
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| Voltage - Collector Emitter Breakdown (Max) | 12V |
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| Frequency - Transition | 8GHz |
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| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz |
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| Gain | 20dB |
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| Power - Max | 175mW |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 8V |
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| Current - Collector (Ic) (Max) | 20mA |
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| Mounting Type | Surface Mount |
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| Package / Case | 6-VSSOP, SC-88, SOT-363 |
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| Supplier Device Package | P-SOT363-6 |
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