Technical Specifications of PMXB65ENEZ
Datasheet | PMXB65ENEZ datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | NXP Semiconductors |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
Rds On (Max) @ Id, Vgs | 67 mOhm @ 3.2A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Gate Charge (Qg) @ Vgs | 11nC @ 10V |
Input Capacitance (Ciss) @ Vds | 295pF @ 15V |
Power - Max | 400mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 3-XDFN Exposed Pad |
Supplier Device Package | DFN1010D-3 |
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