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IPB120N04S4L02ATMA1
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
| Manufacturer Part Number | IPB120N04S4L02ATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | MOSFET N-CH TO263-3 |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| IPB120N04S4L02ATMA1 Price |  |
Technical Specifications of IPB120N04S4L02ATMA1
| Datasheet |  IPB120N04S4L02ATMA1 datasheet |
|---|---|
| Category | Discrete Semiconductor Products |
| Family | Transistors - FETs, MOSFETs - Single |
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS? |
| Packaging | * |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7 mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 110μA |
| Gate Charge (Qg) @ Vgs | 190nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 14560pF @ 25V |
| Power - Max | 158W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | PG-TO263-3-2 |
