Technical Specifications of IXFN160N30T
| Datasheet |  IXFN160N30T datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | IXYS |
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| Series | GigaMOS? |
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| Packaging | Tube |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 300V |
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| Current - Continuous Drain (Id) @ 25°C | 130A |
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| Rds On (Max) @ Id, Vgs | 19 mOhm @ 60A, 10V |
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| Vgs(th) (Max) @ Id | 5V @ 8mA |
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| Gate Charge (Qg) @ Vgs | 335nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 28000pF @ 25V |
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| Power - Max | 900W |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Chassis Mount |
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| Package / Case | SOT-227-4, miniBLOC |
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| Supplier Device Package | SOT-227B |
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