Technical Specifications of 2N6317
| Datasheet |  2N6317 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Microsemi Corporation |
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| Series | - |
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| Packaging | Bulk |
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| Transistor Type | PNP |
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| Current - Collector (Ic) (Max) | 7A |
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| Voltage - Collector Emitter Breakdown (Max) | 60V |
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| Vce Saturation (Max) @ Ib, Ic | 2V @ 1.75A, 7A |
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| Current - Collector Cutoff (Max) | 500μA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 2.5A, 4V |
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| Power - Max | 90W |
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| Frequency - Transition | - |
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| Mounting Type | Through Hole |
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| Package / Case | TO-213AA, TO-66-2 |
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| Supplier Device Package | * |
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