Technical Specifications of 55GN01CA-TB-E
| Datasheet |  55GN01CA-TB-E datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - RF |
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| Manufacturer | ON Semiconductor |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | NPN |
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| Voltage - Collector Emitter Breakdown (Max) | 10V |
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| Frequency - Transition | 4.5GHz |
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| Noise Figure (dB Typ @ f) | 1.9dB @ 1GHz |
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| Gain | 9.5dB |
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| Power - Max | 200mW |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
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| Current - Collector (Ic) (Max) | 70mA |
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| Mounting Type | Surface Mount |
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| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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| Supplier Device Package | 3-CP |
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