Technical Specifications of GA05JT01-46
| Datasheet |  GA05JT01-46 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | GeneSiC Semiconductor |
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| Series | - |
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| Packaging | Bulk |
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| FET Type | Junction Transistor, Normally Off |
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| FET Feature | Silicon Carbide (SiC) |
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| Drain to Source Voltage (Vdss) | 100V |
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| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
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| Rds On (Max) @ Id, Vgs | 240 mOhm @ 5A |
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| Vgs(th) (Max) @ Id | - |
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| Gate Charge (Qg) @ Vgs | - |
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| Input Capacitance (Ciss) @ Vds | - |
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| Power - Max | 20W |
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| Operating Temperature | -55°C ~ 225°C (TJ) |
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| Mounting Type | Through Hole |
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| Package / Case | TO-46-3 |
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| Supplier Device Package | TO-46 |
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