Technical Specifications of 2N6849
| Datasheet |  2N6849 datasheet |
|---|
| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Microsemi Corporation |
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| Series | - |
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| Packaging | Bulk |
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| FET Type | MOSFET P-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 100V |
|---|
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
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| Rds On (Max) @ Id, Vgs | 320 mOhm @ 6.5A, 10V |
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| Vgs(th) (Max) @ Id | 4V @ 250μA |
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| Gate Charge (Qg) @ Vgs | 34.8nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | - |
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| Power - Max | 800mW |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Through Hole |
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| Package / Case | TO-205AF Metal Can |
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| Supplier Device Package | TO-39 |
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