Technical Specifications of IXFH11N80
Datasheet | IXFH11N80 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | IXYS |
Series | HiPerFET? |
Packaging | Tube |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Rds On (Max) @ Id, Vgs | 950 mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 4mA |
Gate Charge (Qg) @ Vgs | 155nC @ 10V |
Input Capacitance (Ciss) @ Vds | 4200pF @ 25V |
Power - Max | 300W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247AD (IXFH) |
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