Technical Specifications of PSMN8R5-108ESQ
| Datasheet |  PSMN8R5-108ESQ datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | NXP Semiconductors |
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| Series | - |
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| Packaging | Tube |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 108V |
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| Current - Continuous Drain (Id) @ 25°C | 100A (Tj) |
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| Rds On (Max) @ Id, Vgs | 8.5 mOhm @ 25A, 10V |
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| Vgs(th) (Max) @ Id | 4V @ 1mA |
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| Gate Charge (Qg) @ Vgs | 111nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 5512pF @ 50V |
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| Power - Max | 263W |
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| Operating Temperature | -55°C ~ 175°C (TJ) |
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| Mounting Type | Through Hole |
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| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
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| Supplier Device Package | I2PAK |
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