Technical Specifications of BSM180D12P2C101
| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Arrays |
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| Manufacturer | Rohm Semiconductor |
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| Series | - |
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| Packaging | Bulk |
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| FET Type | 2 N-Channel (Half Bridge) |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
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| Current - Continuous Drain (Id) @ 25°C | 180A |
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| Rds On (Max) @ Id, Vgs | - |
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| Vgs(th) (Max) @ Id | 4V @ 35.2mA |
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| Gate Charge (Qg) @ Vgs | - |
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| Input Capacitance (Ciss) @ Vds | 23000pF @ 10V |
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| Power - Max | 1130W |
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| Operating Temperature | -40°C ~ 150°C (TJ) |
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| Mounting Type | * |
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| Package / Case | Module |
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| Supplier Device Package | Module |
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