Technical Specifications of BFU660F,115
| Datasheet |  BFU660F,115 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - RF |
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| Manufacturer | NXP Semiconductors |
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| Series | - |
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| Packaging | Cut Tape (CT) |
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| Transistor Type | NPN |
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| Voltage - Collector Emitter Breakdown (Max) | 5.5V |
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| Frequency - Transition | 21GHz |
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| Noise Figure (dB Typ @ f) | 0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz |
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| Gain | 12dB ~ 21dB |
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| Power - Max | 225mW |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 10mA, 2V |
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| Current - Collector (Ic) (Max) | 60mA |
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| Mounting Type | Surface Mount |
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| Package / Case | SOT-343F |
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| Supplier Device Package | 4-DFP |
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