Technical Specifications of 2SA1162S-Y, LF(D
| Datasheet |  2SA1162S-Y, LF(D datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | PNP |
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| Current - Collector (Ic) (Max) | 150mA |
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| Voltage - Collector Emitter Breakdown (Max) | 50V |
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| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
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| Current - Collector Cutoff (Max) | 100nA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 6V |
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| Power - Max | 150mW |
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| Frequency - Transition | 80MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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| Supplier Device Package | S-Mini |
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