Technical Specifications of GPA030A135MN-FDR
| Datasheet |  GPA030A135MN-FDR datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | Global Power Technologies Group |
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| Series | - |
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| Packaging | Tube |
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| IGBT Type | Trench Field Stop |
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| Voltage - Collector Emitter Breakdown (Max) | 1350V |
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| Current - Collector (Ic) (Max) | 60A |
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| Current - Collector Pulsed (Icm) | 90A |
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| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 30A |
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| Power - Max | 329W |
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| Switching Energy | 4.4mJ (on), 1.18mJ (off) |
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| Input Type | Standard |
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| Gate Charge | 300nC |
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| Td (on/off) @ 25°C | 30ns/145ns |
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| Test Condition | 600V, 30A, 5 Ohm, 15V |
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| Reverse Recovery Time (trr) | 450ns |
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| Package / Case | TO-3 |
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| Mounting Type | Through Hole |
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| Supplier Device Package | TO-3PN |
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