Technical Specifications of MJD122-1
Category | Discrete Semiconductor Products |
Family | Transistors - Bipolar (BJT) - Single |
Manufacturer | STMicroelectronics |
Series | - |
Packaging | Bulk |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 8A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 4V @ 80mA, 8A |
Current - Collector Cutoff (Max) | 10μA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 4A, 4V |
Power - Max | 20W |
Frequency - Transition | - |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package | TO-251-3 |
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