Technical Specifications of EPC8008ENGR
Datasheet | EPC8008ENGR datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | EPC |
Series | eGaN? |
Packaging | Tray |
FET Type | GaNFET N-Channel, Gallium Nitride |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
Rds On (Max) @ Id, Vgs | 325 mOhm @ 500mA, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Gate Charge (Qg) @ Vgs | 0.18nC @ 5V |
Input Capacitance (Ciss) @ Vds | 25pF @ 20V |
Power - Max | - |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | Die |
Supplier Device Package | Die |
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