Technical Specifications of 1N649-1
| Datasheet |  1N649-1 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Diodes - Rectifiers - Single |
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| Manufacturer | Microsemi Corporation |
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| Series | - |
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| Packaging | Bulk |
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| Diode Type | Standard |
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| Voltage - DC Reverse (Vr) (Max) | 600V |
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| Current - Average Rectified (Io) | 400mA |
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| Voltage - Forward (Vf) (Max) @ If | 1V @ 400mA |
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| Speed | Standard Recovery >500ns, > 200mA (Io) |
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| Reverse Recovery Time (trr) | - |
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| Current - Reverse Leakage @ Vr | 50nA @ 600V |
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| Capacitance @ Vr, F | - |
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| Mounting Type | Through Hole |
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| Package / Case | DO-204AH, DO-35, Axial |
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| Supplier Device Package | DO-35 |
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| Operating Temperature - Junction | -65°C ~ 175°C |
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