Technical Specifications of EM6M1T2R
| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Arrays |
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| Manufacturer | Rohm Semiconductor |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| FET Type | N and P-Channel |
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| FET Feature | Logic Level Gate |
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| Drain to Source Voltage (Vdss) | 30V, 20V |
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| Current - Continuous Drain (Id) @ 25°C | 100mA, 200mA |
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| Rds On (Max) @ Id, Vgs | 8 Ohm @ 10mA, 4V |
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| Vgs(th) (Max) @ Id | - |
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| Gate Charge (Qg) @ Vgs | 0.9nC @ 4.5V |
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| Input Capacitance (Ciss) @ Vds | 13pF @ 5V |
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| Power - Max | 150mW |
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| Operating Temperature | 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | SOT-563, SOT-666 |
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| Supplier Device Package | EMT6 |
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