Technical Specifications of JAN2N6351
| Datasheet |  JAN2N6351 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Microsemi IRE Division |
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| Series | Military, MIL-PRF-19500/472 |
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| Packaging | Bulk |
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| Transistor Type | NPN - Darlington |
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| Current - Collector (Ic) (Max) | 5A |
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| Voltage - Collector Emitter Breakdown (Max) | 150V |
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| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 10mA, 5A |
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| Current - Collector Cutoff (Max) | - |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 5V |
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| Power - Max | 1W |
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| Frequency - Transition | - |
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| Mounting Type | Through Hole |
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| Package / Case | TO-205AC, TO-33-4 Metal Can |
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| Supplier Device Package | TO-33 |
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