Technical Specifications of STGW35NB60SD
| Datasheet |  STGW35NB60SD datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | STMicroelectronics |
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| Series | PowerMESH? |
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| Packaging | Tube |
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| IGBT Type | - |
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| Voltage - Collector Emitter Breakdown (Max) | 600V |
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| Current - Collector (Ic) (Max) | 70A |
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| Current - Collector Pulsed (Icm) | 250A |
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| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 20A |
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| Power - Max | 200W |
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| Switching Energy | 840μJ (on), 7.4mJ (off) |
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| Input Type | Standard |
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| Gate Charge | 83nC |
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| Td (on/off) @ 25°C | 92ns/1.1μs |
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| Test Condition | 480V, 20A, 100 Ohm, 15V |
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| Reverse Recovery Time (trr) | 44ns |
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| Package / Case | TO-247-3 |
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| Mounting Type | Through Hole |
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| Supplier Device Package | TO-247-3 |
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