Navigation
Home
About us
Products
Manufacturers
RFQ
Service
FAQ
Contact us
ICRFQ.com - Electronic Components Distributor in China Since 2003
We make your sourcing easier!
Get A Fast Quote Worldwide!
[email protected]
Home > Products > Discrete Semiconductor > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1113ACT(TPL3)

RN1113ACT(TPL3)

Manufacturer Part Number RN1113ACT(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 0.1W CST3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
RN1113ACT(TPL3) Price

Technical Specifications of RN1113ACT(TPL3)

Datasheet RN1113ACT(TPL3) datasheet
CategoryDiscrete Semiconductor Products
FamilyTransistors - Bipolar (BJT) - Single, Pre-Biased
ManufacturerToshiba Semiconductor and Storage
Series-
PackagingTape & Reel (TR)
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)80mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)47k
Resistor - Emitter Base (R2) (Ohms)-
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 250μA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition-
Power - Max100mW
Mounting TypeSurface Mount
Package / CaseSC-101, SOT-883
Supplier Device PackageCST3
<   Previous Product Next Product   >
Home > Products

Electronic Components and Parts

RN1113ACT(TPL3)

Manufacturer Part Number RN1113ACT(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 0.1W CST3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
RN1113ACT(TPL3) Price

Technical Specifications of RN1113ACT(TPL3)

Datasheet RN1113ACT(TPL3) datasheet
CategoryDiscrete Semiconductor Products
FamilyTransistors - Bipolar (BJT) - Single, Pre-Biased
ManufacturerToshiba Semiconductor and Storage
Series-
PackagingTape & Reel (TR)
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)80mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)47k
Resistor - Emitter Base (R2) (Ohms)-
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 250μA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition-
Power - Max100mW
Mounting TypeSurface Mount
Package / CaseSC-101, SOT-883
Supplier Device PackageCST3
We can supply Toshiba Semiconductor and Storage part# RN1113ACT(TPL3). Use the request quote form to request RN1113ACT(TPL3) pirce and lead time. RANTLE EAST ELECTRONIC - ICRFQ.com is an independent stocking distributor of electronic components. With 5+ Million line items of available electronic components can ship in short lead-time, over 300 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN1113ACT(TPL3). The price and lead time for RN1113ACT(TPL3) depending on the quantity required, availability and warehouse location. Contact us today and our sales representative will provide you price and delivery on Part# RN1113ACT(TPL3). We look forward to doing business with you.

Related parts for RN1113ACT(TPL3)

AT-16.000MDHE-T
AT-16.000MDHE-T
TXC CORPORATION
16MHz ±20ppm Crystal 12pF 60 Ohm -40°C ~ 85°C AEC-Q200 Surface Mount HC49/US

SIT8208AI-G1-33E-50.000000T
SIT8208AI-G1-33E-50.000000T
SiTIME
OSC XO 3.3V 50MHZ OE

520L10CA16M3677
520L10CA16M3677
CTS-Frequency Controls
16.367667MHz Clipped Sine Wave VCTCXO Oscillator Surface Mount 3.3V 2mA

SIT8209AI-83-33E-156.250000Y
SIT8209AI-83-33E-156.250000Y
SiTIME
OSC XO 3.3V 156.25MHZ OE

ASTMUPCE-33-25.000MHZ-EJ-E-T
ASTMUPCE-33-25.000MHZ-EJ-E-T
Abracon LLC
25MHz LVCMOS MEMS (Silicon) Oscillator Surface Mount 3.3V 36mA Enable/Disable

SIT8008BI-21-33E-16.384000G
SIT8008BI-21-33E-16.384000G
SiTIME
OSC XO 3.3V 16.384MHZ

ASTMHTE-32.000MHZ-XC-E-T
ASTMHTE-32.000MHZ-XC-E-T
Abracon LLC
32MHz LVCMOS MEMS (Silicon) Oscillator Surface Mount 2.25 V ~ 3.63 V Enable/Disable

BAS40-00-G3-18
BAS40-00-G3-18
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 40V 200MA SOT23

BY359X-1500S,127
BY359X-1500S,127
NXP Semiconductors
DIODE GEN PURP 1.5KV 7A TO220F

SS8550BTA
SS8550BTA
Fairchild Semiconductor
TRANS PNP 25V 1.5A TO-92

1N5728B
1N5728B
Microsemi Corporation
DIODE ZENER 4.7V 500MW DO35

VWO140-16IO1
VWO140-16IO1
IXYS
MODULE AC CTLR 3PH 1600V V2-PACK

GS1K-LTP
GS1K-LTP
Micro Commercial Co
DIODE GEN PURP 800V 1A DO214AC

FMD47-06KC5
FMD47-06KC5
IXYS
MOSFET N-CH 600V 47A I4-PAC-5

BZX84B3V3-E3-08
BZX84B3V3-E3-08
Vishay Semiconductor Diodes Division
DIODE ZENER 3.3V 300MW SOT23-3

JAN1N970BUR-1
JAN1N970BUR-1
Microsemi IRE Division
DIODE ZENER 24V 500MW DO213AA

IRF2907ZS-7PPBF
IRF2907ZS-7PPBF
Infineon Technologies
MOSFET N-CH 75V 160A D2PAK7

JANTX1N758AUR-1
JANTX1N758AUR-1
Microsemi IRE Division
DIODE ZENER 10V 500MW DO213AA

SS10P3-M3/86A
SS10P3-M3/86A
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 30V 10A TO277A

2PD601ASL,215
2PD601ASL,215
NXP Semiconductors
TRANS NPN 50V 0.1A SOT-23

<   Previous Product Next Product   >

Related keywords for RN1113ACT(TPL3)