Technical Specifications of 2SK4150TZ-E
| Datasheet |  2SK4150TZ-E datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Renesas Electronics America |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Logic Level Gate, 2.5V Drive |
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| Drain to Source Voltage (Vdss) | 250V |
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| Current - Continuous Drain (Id) @ 25°C | 400mA (Ta) |
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| Rds On (Max) @ Id, Vgs | 5.7 Ohm @ 200mA, 4V |
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| Vgs(th) (Max) @ Id | - |
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| Gate Charge (Qg) @ Vgs | 3.7nC @ 4V |
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| Input Capacitance (Ciss) @ Vds | 80pF @ 25V |
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| Power - Max | 750mW |
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| Operating Temperature | 150°C (TJ) |
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| Mounting Type | Through Hole |
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| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
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| Supplier Device Package | TO-92 |
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