Technical Specifications of BSP299H6327XUSA1
| Datasheet |  BSP299H6327XUSA1 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Infineon Technologies |
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| Series | SIPMOS? |
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| Packaging | Tape & Reel (TR) |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 500V |
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| Current - Continuous Drain (Id) @ 25°C | 400mA (Ta) |
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| Rds On (Max) @ Id, Vgs | 4 Ohm @ 400mA, 10V |
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| Vgs(th) (Max) @ Id | 4V @ 1mA |
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| Gate Charge (Qg) @ Vgs | - |
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| Input Capacitance (Ciss) @ Vds | 400pF @ 25V |
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| Power - Max | 1.8W |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | TO-261-4, TO-261AA |
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| Supplier Device Package | PG-SOT223-4 |
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