Technical Specifications of APT1001R6BFLLG
Datasheet | APT1001R6BFLLG datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Microsemi Corporation |
Series | POWER MOS 7? |
Packaging | Tube |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
Rds On (Max) @ Id, Vgs | 1.6 Ohm @ 4A, 10V |
Vgs(th) (Max) @ Id | 5V @ 1mA |
Gate Charge (Qg) @ Vgs | 55nC @ 10V |
Input Capacitance (Ciss) @ Vds | 1320pF @ 25V |
Power - Max | 266W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 [B] |
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