Technical Specifications of HN3C10FUTE85LF
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - RF |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | 2 NPN (Dual) |
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| Voltage - Collector Emitter Breakdown (Max) | 12V |
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| Frequency - Transition | 7GHz |
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| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
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| Gain | 11.5dB |
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| Power - Max | 200mW |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 20mA, 10V |
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| Current - Collector (Ic) (Max) | 80mA |
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| Mounting Type | Surface Mount |
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| Package / Case | 6-TSSOP, SC-88, SOT-363 |
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| Supplier Device Package | US6 |
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