Technical Specifications of RYM002N05T2CL
| Datasheet |  RYM002N05T2CL datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Rohm Semiconductor |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Logic Level Gate, 0.9V Drive |
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| Drain to Source Voltage (Vdss) | 50V |
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| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
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| Rds On (Max) @ Id, Vgs | 2.2 Ohm @ 200mA, 4.5V |
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| Vgs(th) (Max) @ Id | 800mV @ 1mA |
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| Gate Charge (Qg) @ Vgs | - |
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| Input Capacitance (Ciss) @ Vds | 26pF @ 10V |
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| Power - Max | 150mW |
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| Operating Temperature | 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | SOT-723 |
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| Supplier Device Package | VMT3 |
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