Technical Specifications of DMN1032UCB4-7
| Datasheet |  DMN1032UCB4-7 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Diodes Incorporated |
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| Series | - |
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| Packaging | Cut Tape (CT) |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 12V |
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| Current - Continuous Drain (Id) @ 25°C | 4.8A (Ta) |
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| Rds On (Max) @ Id, Vgs | 26 mOhm @ 1A, 4.5V |
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| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
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| Gate Charge (Qg) @ Vgs | 4.5nC @ 4.5V |
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| Input Capacitance (Ciss) @ Vds | 450pF @ 6V |
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| Power - Max | 900mW |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | 4-UFBGA |
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| Supplier Device Package | U-WLB1010-4 |
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