Technical Specifications of IRLMS6702TR
Datasheet | IRLMS6702TR datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Infineon Technologies |
Series | HEXFET? |
Packaging | Cut Tape (CT) |
FET Type | MOSFET P-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
Rds On (Max) @ Id, Vgs | 200 mOhm @ 1.6A, 4.5V |
Vgs(th) (Max) @ Id | 700mV @ 250μA |
Gate Charge (Qg) @ Vgs | 8.8nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 210pF @ 15V |
Power - Max | 1.7W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 |
Supplier Device Package | Micro6?(SOT23-6) |
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