Technical Specifications of IRF7663
| Datasheet |  IRF7663 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Infineon Technologies |
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| Series | HEXFET? |
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| Packaging | Tube |
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| FET Type | MOSFET P-Channel, Metal Oxide |
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| FET Feature | Logic Level Gate |
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| Drain to Source Voltage (Vdss) | 20V |
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| Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta) |
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| Rds On (Max) @ Id, Vgs | 20 mOhm @ 7A, 4.5V |
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| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
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| Gate Charge (Qg) @ Vgs | 45nC @ 5V |
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| Input Capacitance (Ciss) @ Vds | 2520pF @ 10V |
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| Power - Max | 1.8W |
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| Operating Temperature | * |
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| Mounting Type | Surface Mount |
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| Package / Case | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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| Supplier Device Package | Micro8? |
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