Technical Specifications of TPN4R712MD,L1Q
| Datasheet |  TPN4R712MD,L1Q datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| FET Type | MOSFET P-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 20V |
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| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
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| Rds On (Max) @ Id, Vgs | 4.7 mOhm @ 18A, 4.5V |
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| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
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| Gate Charge (Qg) @ Vgs | 65nC @ 5V |
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| Input Capacitance (Ciss) @ Vds | 4300pF @ 10V |
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| Power - Max | 42W |
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| Operating Temperature | 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | 8-PowerVDFN |
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| Supplier Device Package | 8-TSON Advance |
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