Technical Specifications of IPB083N10N3 G
| Datasheet |  IPB083N10N3 G datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Infineon Technologies |
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| Series | OptiMOS? |
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| Packaging | Cut Tape (CT) |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 100V |
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| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
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| Rds On (Max) @ Id, Vgs | 8.3 mOhm @ 73A, 10V |
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| Vgs(th) (Max) @ Id | 3.5V @ 75μA |
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| Gate Charge (Qg) @ Vgs | 55nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 3980pF @ 50V |
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| Power - Max | 125W |
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| Operating Temperature | -55°C ~ 175°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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| Supplier Device Package | PG-TO263-2 |
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