Technical Specifications of 2SJ649-AZ
| Datasheet |  2SJ649-AZ datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Renesas Electronics America |
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| Series | - |
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| Packaging | Bulk |
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| FET Type | MOSFET P-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 60V |
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| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
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| Rds On (Max) @ Id, Vgs | 48 mOhm @ 10A, 10V |
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| Vgs(th) (Max) @ Id | - |
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| Gate Charge (Qg) @ Vgs | 38nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 1900pF @ 10V |
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| Power - Max | 2W |
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| Operating Temperature | 150°C (TJ) |
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| Mounting Type | Through Hole |
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| Package / Case | TO-220-3 Isolated Tab |
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| Supplier Device Package | TO-220 Isolated Tab |
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