Technical Specifications of IXTX20N150
Datasheet | IXTX20N150 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | IXYS |
Series | - |
Packaging | * |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 1500V (1.5kV) |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Rds On (Max) @ Id, Vgs | 1 Ohm @ 10A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 1mA |
Gate Charge (Qg) @ Vgs | 215nC @ 10V |
Input Capacitance (Ciss) @ Vds | 7800pF @ 25V |
Power - Max | 1250W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | PLUS247?-3 |
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