Technical Specifications of GDP60Z120E
Datasheet | GDP60Z120E datasheet |
Category | Discrete Semiconductor Products |
Family | Diodes - Rectifiers - Single |
Manufacturer | Global Power Technologies Group |
Series | Amp+? |
Packaging | Tube |
Diode Type | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max) | 1200V (1.2kV) |
Current - Average Rectified (Io) | 60A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.7V @ 60A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 100μA @ 1200V |
Capacitance @ Vr, F | 3581pF @ 1V, 1MHz |
Mounting Type | Through Hole |
Package / Case | TO-247-2 |
Supplier Device Package | TO-247-2 |
Operating Temperature - Junction | -55°C ~ 135°C |
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