Technical Specifications of 2N5307
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Fairchild Semiconductor |
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| Series | - |
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| Packaging | Bulk |
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| Transistor Type | NPN - Darlington |
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| Current - Collector (Ic) (Max) | 1.2A |
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| Voltage - Collector Emitter Breakdown (Max) | 40V |
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| Vce Saturation (Max) @ Ib, Ic | 1.4V @ 200μA, 200mA |
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| Current - Collector Cutoff (Max) | 100nA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 2mA, 5V |
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| Power - Max | 625mW |
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| Frequency - Transition | - |
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| Mounting Type | Through Hole |
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| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
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| Supplier Device Package | TO-92-3 |
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