Technical Specifications of EPC8002ENGR
| Datasheet |  EPC8002ENGR datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | EPC |
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| Series | eGaN? |
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| Packaging | Tray |
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| FET Type | GaNFET N-Channel, Gallium Nitride |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 65V |
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| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
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| Rds On (Max) @ Id, Vgs | 530 mOhm @ 500mA, 5V |
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| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
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| Gate Charge (Qg) @ Vgs | 0.14nC @ 5V |
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| Input Capacitance (Ciss) @ Vds | 21pF @ 32.5V |
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| Power - Max | - |
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| Operating Temperature | -40°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | Die |
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| Supplier Device Package | Die |
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