Technical Specifications of FDD10N20LZTM
Datasheet | FDD10N20LZTM datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Fairchild Semiconductor |
Series | UniFET? |
Packaging | Tape & Reel (TR) |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) |
Rds On (Max) @ Id, Vgs | 360 mOhm @ 3.8A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Gate Charge (Qg) @ Vgs | 16nC @ 10V |
Input Capacitance (Ciss) @ Vds | 585pF @ 25V |
Power - Max | 83W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | TO-252, (D-Pak) |
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