Technical Specifications of NP33N06YDG-E1-AY
| Datasheet |  NP33N06YDG-E1-AY datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Renesas Electronics America |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Logic Level Gate |
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| Drain to Source Voltage (Vdss) | 60V |
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| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
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| Rds On (Max) @ Id, Vgs | 14 mOhm @ 16.5A, 10V |
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| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
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| Gate Charge (Qg) @ Vgs | 78nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 3900pF @ 25V |
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| Power - Max | 1W |
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| Operating Temperature | 175°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | 8-SMD, Flat Lead Exposed Pad |
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| Supplier Device Package | 8-HSON |
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