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RN1110MFV,L3F
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| Manufacturer Part Number | RN1110MFV,L3F |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | TRANS PREBIAS NPN 0.15W VESM |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| RN1110MFV,L3F Price |  |
Technical Specifications of RN1110MFV,L3F
| Category | Discrete Semiconductor Products |
|---|---|
| Family | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 4.7k |
| Resistor - Emitter Base (R2) (Ohms) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500μA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | - |
| Power - Max | 150mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-723 |
| Supplier Device Package | VESM |
