Technical Specifications of IRF6609
| Datasheet |  IRF6609 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Infineon Technologies |
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| Series | HEXFET? |
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| Packaging | Tape & Reel (TR) |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 20V |
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| Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 150A (Tc) |
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| Rds On (Max) @ Id, Vgs | 2 mOhm @ 31A, 10V |
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| Vgs(th) (Max) @ Id | 2.45V @ 250μA |
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| Gate Charge (Qg) @ Vgs | 69nC @ 4.5V |
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| Input Capacitance (Ciss) @ Vds | 6290pF @ 10V |
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| Power - Max | 1.8W |
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| Operating Temperature | -40°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | DirectFET? Isometric MT |
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| Supplier Device Package | DIRECTFET? MT |
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