Technical Specifications of NESG2101M05-A
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - RF |
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| Manufacturer | CEL |
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| Series | - |
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| Packaging | Bulk |
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| Transistor Type | NPN |
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| Voltage - Collector Emitter Breakdown (Max) | 5V |
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| Frequency - Transition | 17GHz |
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| Noise Figure (dB Typ @ f) | 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz |
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| Gain | 11dB ~ 19dB |
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| Power - Max | 500mW |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 130 @ 15mA, 2V |
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| Current - Collector (Ic) (Max) | 100mA |
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| Mounting Type | Surface Mount |
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| Package / Case | SOT-343F |
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| Supplier Device Package | M05 |
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