Technical Specifications of BDP950H6327XTSA1
| Datasheet |  BDP950H6327XTSA1 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Infineon Technologies |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | PNP |
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| Current - Collector (Ic) (Max) | 3A |
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| Voltage - Collector Emitter Breakdown (Max) | 60V |
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| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
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| Current - Collector Cutoff (Max) | 100nA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 500mA, 1V |
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| Power - Max | 5W |
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| Frequency - Transition | 100MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | TO-261-4, TO-261AA |
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| Supplier Device Package | PG-SOT223-4 |
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