Technical Specifications of MJD31C1G
| Datasheet |  MJD31C1G datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | ON Semiconductor |
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| Series | - |
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| Packaging | Tube |
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| Transistor Type | NPN |
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| Current - Collector (Ic) (Max) | 3A |
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| Voltage - Collector Emitter Breakdown (Max) | 100V |
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| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A |
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| Current - Collector Cutoff (Max) | 50μA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A, 4V |
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| Power - Max | 1.56W |
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| Frequency - Transition | 3MHz |
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| Mounting Type | Through Hole |
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| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
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| Supplier Device Package | I-Pak |
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