Technical Specifications of NE85639-A
| Datasheet |  NE85639-A datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - RF |
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| Manufacturer | CEL |
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| Series | - |
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| Packaging | Bulk |
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| Transistor Type | NPN |
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| Voltage - Collector Emitter Breakdown (Max) | 12V |
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| Frequency - Transition | 9GHz |
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| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
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| Gain | 13dB |
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| Power - Max | 200mW |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 10V |
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| Current - Collector (Ic) (Max) | 100mA |
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| Mounting Type | Surface Mount |
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| Package / Case | TO-253-4, TO-253AA |
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| Supplier Device Package | SOT-143 |
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