Technical Specifications of NTMFS4C09NAT1G
| Datasheet |  NTMFS4C09NAT1G datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | ON Semiconductor |
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| Series | - |
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| Packaging | * |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 30V |
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| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 52A (Tc) |
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| Rds On (Max) @ Id, Vgs | 5.8 mOhm @ 30A, 10V |
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| Vgs(th) (Max) @ Id | 2.1V @ 250μA |
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| Gate Charge (Qg) @ Vgs | 1.9nC @ 4.5V |
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| Input Capacitance (Ciss) @ Vds | 1252pF @ 15V |
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| Power - Max | 760mW |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | * |
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| Package / Case | * |
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| Supplier Device Package | * |
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