Technical Specifications of 2SD1768STPQ
| Datasheet |  2SD1768STPQ datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Rohm Semiconductor |
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| Series | - |
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| Packaging | Tape & Box (TB) |
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| Transistor Type | NPN |
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| Current - Collector (Ic) (Max) | 1A |
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| Voltage - Collector Emitter Breakdown (Max) | 80V |
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| Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 500mA |
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| Current - Collector Cutoff (Max) | 1μA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 3V |
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| Power - Max | 300mW |
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| Frequency - Transition | 100MHz |
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| Mounting Type | Through Hole |
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| Package / Case | SC-72 Formed Leads |
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| Supplier Device Package | SPT |
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