Technical Specifications of MJ11032G
| Datasheet |  MJ11032G datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | ON Semiconductor |
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| Series | - |
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| Packaging | Tray |
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| Transistor Type | NPN - Darlington |
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| Current - Collector (Ic) (Max) | 50A |
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| Voltage - Collector Emitter Breakdown (Max) | 120V |
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| Vce Saturation (Max) @ Ib, Ic | 3.5V @ 500mA, 50A |
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| Current - Collector Cutoff (Max) | 2mA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 25A, 5V |
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| Power - Max | 300W |
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| Frequency - Transition | - |
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| Mounting Type | Through Hole |
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| Package / Case | TO-204AE |
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| Supplier Device Package | TO-3 |
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